Tip132c datasheet

Datasheet

Tip132c datasheet


Features • High DC Current Gain tip132c − hFE = 2500 ( Typ) @ IC = 4. TIP31C Datasheet TIP31C, alldatasheet, TIP31C pdf, TIP31C PDF, TIP31C Data sheet, Datasheets, free, datasheet, TIP31C manual, datenblatt, Electronics TIP31C data. Datasheet contains preliminary data; supplementary data will be published at a tip132c later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. pdf Size: 136K _ st2. TIP31C Datasheet ( PDF) 1. The complementary NPN type is TIP31C. Tip132c datasheet.
Specification Datasheet TIP32C Created Date: Z. TIP131 TIP132 ( NPN), TIP137 ( PNP) Darlington Complementary Silicon Power Transistors Designed for general− purpose amplifier low− speed switching applications. 0 Adc • Collector− Emitter Sustaining Voltage − @ 30 mAdc VCEO( sus) = 80 Vdc ( Min) − datasheet TIP131 = 100 Vdc ( Min. TIP31C Power transistors General features New enhanced series High switching speed hFE improved linearity hFE Grouping 3 2 Applications 1 Linear and switching industrial application TO- 220 Description datasheet The TIP31C is a base island technology NPN power tip132c transistor in TO- 220. tip132c TIP31C Transistor Equivalent Substitute - Cross- Reference Search.


Datasheet

The TIP31C is a base island technology NPN power transistor in TO- 220 plastic package with better performances than the industry standard TIP31C that make this device suitable for audio, power linear and switching applications. The PNP type is TIP32C. Internal schematic diagram 1 2 3 TO- 220 www. TIP31C datasheet, TIP31C pdf, TIP31C data sheet, datasheet, data sheet, pdf, Boca Semiconductor Corporation, General Purpose Amplifier and Switching Applications.

tip132c datasheet

TIP31C, TIP32C There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i. , the transistor must not be subjected to greater dissipation than the curves indicate.